With the development of ULSI, ultra-large-scale circuits (ULC) are rapidly becoming more accessible. This means that the devices and their dimensions are shrinking. The demands placed on the device’s size, quality, uniformity and thickness of the film is also growing. This is because the current line widths for most semiconductor devices are less than 0.1 mm. Additionally, the original processes were unable produce wires with low resistance. In order to make circuit metallization connections better or more durable, you will need new materials, processes and deposition methods. Metal silicides have increased in popularity due to their high conductivity. TiSi2, CoSi2, TiSi2, CoSi2, WSi2, TaSi2, MOSi2 are some of the most studied silicases. But, TiSi2 (TiSi2) is unique in that it has good characteristics such as high conductivity. High selectivity. Thermal stability. Good process adaptability. This is why titanium silicide has been widely employed in integrated circuit devices such as metal oxide silicon (MOS), metallic oxide semiconductor field–effect transistor (MOSFET), WSi2, TaSi2, MoSi2), and dynamic Random Access Memory (DRAM) gates, source/drains, interconnect, and contact manufacturing.
There are many applications for titanium silicide, including the fabrication of MOS, MOSFET, and metal oxide semiconductor field effect transistors (MOSFET). Examples of this include:
1) The titanium silicide barriers layer has been prepared. An isolation region is created in the device that uses the process for producing the titanium-silicone silicide barrier layer. The device has a sacrificialoxide layer covering its upper surface. The current invention uses: Wet etching is used to remove unalloyed titanium from the surface of the device. The invention is cheaper than the prior art because it removes the silicide-block oxide layer. Also, wet etching reduces the loss and stability of the isolation oxide film.
2) Preparation and use of in-situ synthesized Titaniicide (Ti5Si3) composite material with a reinforced phase of aluminum titanium carbide. Ti3AlC2/Ti5Si3 composites had different volume ratios. This resulted in a 10-40% volume of the titanium silicide-particle reinforced phase. As raw materials for the preparation, graphite, aluminum, titanium, and silica powder were used. Mixed the raw material powder by mechanical method for between 8 and 24 hours. Once the application pressure has been reached, the heat rate of 10 to 50° C/min is applied to the mold. It then is sintered in an oven with a protective atmosphere at 1400 1600. The sintering process takes 0.5 to 2 hours. The invention is capable of preparing the aluminum titanium carbide/titanium silicide composite material, with high purity. It can also be done at very low temperatures for a brief period.
3) Making a composite functional silicon silicide coated glasses. On an ordinary float or uncoated glass substrate, the thin film is laid. Between them is placed a thin coating of silicon. To make titanium silicide/silicon composites, you can dope a little bit of active carbon to the film or add titanium silicide or titan carbide. Present invention is a type of coated glasses that combine the function of dimming heat insulation and heat insulation.
This is the procedure for creating a semiconductor device. On top of the protective layer, there is a titanium silicide. Between the titanium silicide layers and the polysilicon layer and the protective layer, three layers of nitrogen are added to provide protection. There are three layers: a silicon silicide spacing layer, a parent and a silicone oxide spacer layer. Additionally, the source- and drain electrodes have an inner and outer dielectric layers. In the inner dielectric layer, there is a contact opening. The utility model, which uses the above-mentioned technical solution to protect the contact window opening and wires of the grid without any short-circuiting, can be used.
TRUNNANO (Luoyang Trunnano Tech Co. Ltd.), is a professional Silicide manufacturer. It has over 12 years of chemical product research. Please contact us to request high-quality Titanium Silicide.