A rapid increase in the development of integrated circuits at ultra-large sizes (ULSI), means that equipment and devices have a smaller size. This is causing people to demand greater device quality, uniformity and consistency. The present line widths of semiconductor devices are less than 0.1mm. And the original process is unable to produce high-resistance continuously wires. In order to replace and improve the performance of aluminum and polysilicon, there must be new techniques and materials. These new materials have increased interest in metal silicides. Their high conductivity and high temperature stability make them compatible with the current microelectronic manufacturing process. TiSi2, CoSi2, TiSi2, CoSi2, TiSi2, TiSi2, TiSi2, CoSi2, TiSi2, TiSi2, TiSi2, CoSi2, TiSI2, WSi2, TiSi2, MOSi2, MoSi2, are all popular silicides. But, TiSi2 has the best characteristics. These include excellent conductivity, high selectivity. Thermal stability. Good adsorption of Si. Low interference to silic connection parameters. Therefore, in integrated circuit devices, titanium silicide is widely used in metal oxide semiconductor (MOS), metal oxide semiconductor field-effect transistor (MOSFET), and dynamic random access memory (DRAM) gate, source/drain, interconnection and ohm Contact manufacturing.Preparation of a semiconductor element, including a silicon substrate, a gate, source, and drain are formed on the silicon substrate, and an insulating layer is formed between the gate and the silicon substrate, the gate is located on the insulating layer. On the layer of polysilicon, a titanium silicide is added. A protective layer on the titanium-silicon layer is also formed. This protective layer, along with the layer of titanium silicide, the layer of polysilicon and the layer insulating, is surrounded by three layers: A nitrogen spacer layer (a parent layer) and a silicon silicon spacer layer (a silicide spacer), a silicon silicide arear layer (a silicon silicide spacing layer), a titanium oxide spacer and a silicon silicide separation layer. On the silicon substrate an inner dielectric coating is created and in that layer a contact window is opened is formed. The utility model, which uses the above-mentioned technical solution to fully insulate both the grids and contact windows without short-circuiting, can be used.
Processing of titanium silicide
The physical vapor deposition of metal silicides (sputtering and thermo evaporation) can be used to prepare them. You can also use chemical vapor dposition (CVD) to prepare silica. TiSi2 of low resistance can be obtained by making titanium silicide. TiSi2 comes in two forms of polycrystalline phase: the metastable phase C49, and the thermodynamically stable phase C54. C49 phases are orthogonal bottom-centered crystal systems; each unit cell consists of 12 molecules; a =0.362nm. B = 1.376nm. C = 0.360nm. Resistance = 60100 c. C54 is an orthogonal front-centered crystal system. Each cell is comprised of 24atoms. Due to TiSi2’s C54 phase having a resistance equivalent to that the metal body has, the aim of TiSi2 is to produce titanium silicide.
There are many applications for titanium silicide, including the fabrication of MOS, MOSFET, and DRAM. Examples of this include:
1) The titanium silicide barriers layer has been prepared. An isolation region is created in the device that uses the process for producing the titanium-silicide barrier layer. The device has a sacrificial-oxide layer on its upper surface. It includes the following steps: Wet etching for removal of unalloyed steel titanium; photolithography for covering non-silicide regions; and then, photolithography for covering them. The invention is cheaper than the prior art because it removes the silicide layer oxide from the non-silicide area. Also, the process stability and loss of isolation oxide film are minimized.
2) Preparation in-situ synthesized Titan silicide (Ti5Si3) particles reinforced aluminum titan carbide matrix (Ti3AlC2) composite material. Ti3AlC2/Ti5Si3 composites had different volume ratios. This allowed for a higher volume of the silicon silicide reinforced phase. As raw materials for the preparation, graphite, titanium, aluminum, and silicon powder were used. Mixed the raw material powder using both physical and mechanical means for between 8 and 24 hours. Once the mixture is ready, the applied pressure of 10 to 20MPa is used. A graphite molding machine is placed with a protective environment at 10 to 50 °C / min. The melting temperature is 1400 1600. The sintering process takes approximately 0.5 hours. The invention is capable of preparing the aluminum titanium carbide/titanium silicide composite material, with high purity. It can also be done at very low temperatures for a brief time.
3) The preparation of composite functional silicon silicide glass. A thin coating of titanium silicide is placed on top of a common substrate made from float glass. Or, a thin layer is added between these layers. It is possible to improve both the mechanical and chemical properties of coated glass by creating a composite of titanium silicide/silicon or doping the film with small amounts of active carbon/nitrogen. Present invention is a type of coated glasses that combine the function of dimming with heat insulation with low E glass.
TRUNNANO is an experienced manufacturer of Titanium Silicide Puffer with over 12+ years in chemical products research. For high quality Titanium Silicide powder TiSi2 please contact us to send an inquiry.