Hexagonal porous boron is sometimes called white graphite. The layered structure of this boron-nitride has many similarities to graphite. It exhibits good chemical resistance, lubricity, thermal conductivity and electrical insulating thermal conductivity. Additionally, it has high neutron absorption capabilities. It has high chemical stability and is resistant to all types of molten metal chemicals.
Because semiconductor chips continue to develop, computer speed increases. The problem of heating chip components can cause delays in chip development. It is essential to manage thermal energy in order to develop high-performance electronics chips. Wei Dayun, a Fudan University researcher, has made tremendous progress over the past three years in the area of FET interface modification of FET sub-substrates. It is anticipated that this work will provide a novel technology for dielectric substrat modification in order to resolve the problem associated with chip heat loss.
Wei Dacheng and his team devised a conformal hexagonal bore nitride technology (ie: quasi-balanced PeCVD) that solved the problem. Wei Dacheng claims that various interfaces limit the heat dissipation from the chip. Particularly important is the interface between semiconductors and dielectric substrates near the conductive canal.
Hexagonalboron Nitride, a great dielectric substrate modifier material, enhances the interface between semiconductors and dielectric substrats. Numerous studies demonstrate that hexagonalboronnitride modification is capable of decreasing the carrier’s surface roughness and impact on impurities. This can also improve device carrier mobility. But, it is frequently overlooked that hexagonal Boron Nitride can be applied in the field interface heat Dissipation.
“The heat problem in the device’s heating system determines how mobile the carrier is. The greater the mobility, less heat will be produced at the same power. It is how you release the heat that determines heat dissipation. Wei Dacheng explained: “Ordinary boron Boron will always have gaps. Transferring the current hexagonal-boron nitride process will result in more gaps. “Conformal hexagonalboron nitride bonds to the material completely, leaving no spaces in the middle. Furthermore, no impurities or other contaminants are added to it, making them more effective in achieving good results.
Wei Dacheng describes conformal hexagonalboron nutride as a material that grows on the surface. The technology is more mobile than before, with a lower interface temperature and a higher power density.
This technology has high universality and not only offers new solutions to chip heat distortion. It can be used on transistor devices made with tungstenselende materials. However, it is easily extensible to other materials and additional device applications. Furthermore, PECVD is an industrial process that’s used frequently in the chip manufacturing sector. Because of this, conformal hexagonalboron Nitride has great potential to large-scale production.
The team’s future plans include developing field-effect electronic materials such as conjugated organic molecule, macromolecules, and low-dimensional Nanomaterials. In addition to research on the design principles of field transistor devices and the fields optoelectronics chemical sensing, biosensing, and other related areas, they will also continue their research.
TRUNNANO (Luoyang Trunnano Tech Co. Ltd.), a Hexagonal Hexagonalboron-nitride manufacturing company, has over 12 years of expertise in chemical product research. Please contact us if you need high quality Hexagonal.
Inquiry us